4.8 Article

Solution-Processed MoS2-Based Back-to-Back Diodes Circuit Applications for Signal Demodulators and Envelope Detectors

Journal

ACS MATERIALS LETTERS
Volume 4, Issue 8, Pages 1556-1564

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsmaterialslett.2c00515

Keywords

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Funding

  1. National Research Foundation of Korea (NRF) [2021R1C1C1005235]
  2. National Research Foundation of Korea (NRF) - Korean Government (MSIT) [2020R1C1C1009381]
  3. National Research Foundation of Korea [2021R1C1C1005235] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The voice-user interface allows humans to interact with electronic devices through voice commands, providing convenient experiences in touch-free applications. This research presents a platinum/molybdenum disulfide back-to-back diodes architecture that functions as both a frequency detector and an envelope detector. The gate tunable diodes circuit shows promise for high-integration and low-power applications in future mobile electronics.
Voice-user interface enables humans to interact with electronic devices through voice commands, thereby providing exceptionally convenient experiences in various touch- free applications based on user-voice recognition. To recognize and process voice information, precise sound signal analysis is required by using an envelope detector that can convert the oscillating voice signal to the enveloped signal. In this work, we present a platinum/molybdenum disulfide (Pt/MoS2) back-to-back (BTB) diodes architecture that, only with a single-device unit, can function as a frequency detector and an envelope detector. Benefiting from electrostatic control of the doping level of the MoS2 channel, the device exhibited both high and low resistance-capacitance delay operation (under floating and high gate voltage conditions) toward multidemodulator without any loop filter circuit components. We thus believe that our gate tunable BTB diodes circuit would be a promising key technique toward the high-integration and low-power applications for future mobile electronics.

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