4.6 Article

High Detectivity and Fast MoS2 Monolayer MSM Photodetector

Journal

ACS APPLIED ELECTRONIC MATERIALS
Volume 4, Issue 12, Pages 5739-5746

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c01301

Keywords

MoS2; MSM photodetector; responsivity; external quantum efficiency; detectivity

Funding

  1. UGC Government of India
  2. TIH-IOT CHANAKYA Group (PhD, PG, and UG) Fellowship Programme 2021-2022 [TIH-IOT/12/2022/CHANAKYA/Group/Sanction Letter/004]
  3. MHRD STARS [STARS/APR2019/NS/116/FS]

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Metal-semiconductor-metal (MSM) photodetectors achieve efficient performance with low dark current and high photocurrent, as well as high peak responsivity and external quantum efficiency, through wet transfer and patterned electrode structure.
Metal-semiconductor-metal (MSM) photodetectors offer efficient solutions for many applications. Here, we combine surface energy assisted wet transfer of a MoS2 monolayer with patterned interdigitated platinum electrodes. The chemical vapor deposition (CVD)-deposited MoS2 monolayer is analyzed for various performance parameters. The achieved dark current and photocurrent are 5.37 x 10-8 A and on the order of 10-5 A, respectively. The achieved peak responsivity and peak external quantum efficiency are 13.15 mA/W at 480 nm and 21.86% at 4.5 V, respectively. The Ion/Ioff ratio obtained is 256 for 5 V with a rise and fall time of 0.06 and 0.14 ms, respectively.

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