Current switching of the antiferromagnetic Neel vector in Pd/CoO/MgO(001)

Recently, the electrical switching of antiferromagnetic (AFM) order has been intensively investigated because of its application potential in data storage technology. Herein, we report the current switching of the AFM Neel vector in epitaxial Pd/CoO films as a function of temperature. Using combined measurements of Hall resistance (HR) and x-ray magnetic linear dichroism (XMLD) below and above the AFM Neel temperature, we unambiguously identified both magnetic and nonmagnetic contributions to the current-induced HR change. Through magnetic field-induced HR measurements, we quantitatively determined the percentage of current -induced CoO spin switching. Further, we showed that the thermal effect dominated the CoO magnetic switching more in samples with a thinner Pd layer and that samples with a thicker CoO layer required higher thermal activation for current-induced magnetic switching. These results provide a clear and comprehensive picture of current-induced AFM spin switching across the AFM Neel temperature.

Automated summary

This study investigates the mechanism of current-induced switching of antiferromagnetic (AFM) order using measurements of Hall resistance and x-ray magnetic linear dichroism. The researchers identified both magnetic and nonmagnetic contributions to the current-induced changes and quantitatively determined the percentage of spin switching. They also found that the thermal effect on CoO magnetic switching varies with the film structure.