Journal
PHYSICAL REVIEW B
Volume 106, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.106.075123
Keywords
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Funding
- Depart-ment of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- National Science Foundation Graduate Research Fellowship [DGE-1656518]
- Simons Foundation through a Simons Fellowship in The-oretical Physics
- Sloan Foundation through a Sloan Research Fellowship
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Local moment formation is commonly observed in disordered insulators due to short-range, repulsive electron-electron interactions. By studying one-dimensional Hubbard chains with quenched randomness, we find exponential decay of charge and fermion two-point correlations, but power-law decay of spin correlations.
Local moment formation is ubiquitous in disordered semiconductors such as Si:P, where it is observed both in the metallic and the insulating regimes. Here, we focus on local moment behavior in disordered insulators, which arises from short-ranged, repulsive electron-electron interactions. Using density matrix renormalization group and strong-disorder renormalization group methods, we study paradigmatic models of interacting insulators: one-dimensional Hubbard chains with quenched randomness. In chains with either random fermion hoppings or random chemical potentials, both at and away from half-filling, we find exponential decay of disorder-averaged charge and fermion two-point correlations, but power-law decay of disorder-averaged spin correlations that are indicative of the random singlet phase. The numerical results can be understood qualitatively by appealing to the large-interaction limit of the Hubbard chain, in which a remarkably simple picture emerges.
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