Journal
PHYSICAL REVIEW B
Volume 106, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.106.L241104
Keywords
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Funding
- Swiss National Science Foundation through the AMBIZIONE Grant [PZ00P2_186146]
- Swiss National Science Foundation (SNF) [PZ00P2_186146] Funding Source: Swiss National Science Foundation (SNF)
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This study investigates the effects of strongly correlated electrons on the excitonic properties in gate-controlled heterostructures. The results show that exciton-polarons can serve as a direct signature of correlation-driven insulators formation.
We consider dressing of excitonic properties by strongly correlated electrons in gate-controlled twisted homobilayer heterostructures. The combined effect of the moire potential and the Coulomb interaction supports the formation of different strongly correlated phases depending on the filling, including charge-ordered metals or incompressible insulators at integer occupation. The coupling between excitons and electrons results in a splitting of the excitonic resonance into an attractive and a repulsive polaron peak. Analyzing the properties of the exciton-polarons across the different phases of the system, we reveal a discontinuous evolution of the spectrum with the formation of a double-peak structure in the repulsive polaron branch. The double-peak structure emerges for noninteger fillings and it is controlled by the energy separation between the quasiparticle states close to the Fermi level and the high-energy doublons excitations. Our results demonstrate that exciton-polarons carry a clear hallmark of the electronic correlations and, thus, provide a direct signature of the formation of correlation-driven insulators in gate-controlled heterostructures.
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