Journal
ACS PHOTONICS
Volume 3, Issue 6, Pages 1102-1108Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.6b00192
Keywords
black phosphorus; field-effect transistor; n-type; stability; photodoping
Categories
Funding
- Taiwan Consortium of Emergent Crystalline Materials (TCECM)
- [103-2119-M-002-021-MY3]
- [102-2119-M-002-005]
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In this article, we propose a novel approach to demonstrate tunable photoinduced carrier transport of a few-layered black phosphorus (BP) field-effect transistor (FET) with extended air stability using a light-sensitized ultrathin encapsulated layer. Titanium suboxide (TiOx) ultrathin film (approximately 3 nm), which is an amorphous phase of crystalline TiO2 and can be solution processed, simultaneously exhibits the unique dual functions of passivation and photoinduced doping on a BP FET. The photoinduced electron transfer at TiOx/BP interfaces provides tunable n-type doping on BP through light illumination. Accordingly, the intrinsic hole-dominated transport of BP can be gradually tuned to the electron-dominated transport at a TiOx/BP FET using light modulation, with enhanced electron mobility and extended air stability of the device. The novel device structure consisting of a light-sensitized encapsulated layer with controllable and reversible doping through light illumination on BP exhibits great potential for the future development of stable BP-based semiconductor logic devices or optoelectronic devices.
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