Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 14, Issue 36, Pages 41598-41604Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c1116241598
Keywords
inverse Rashba Edelstein effect; spin pumping; ferromagnetic resonance; transition-metal dichalcogenides; spin-to-charge conversion
Funding
- Ministry of Human Resource Development [7519, 7058]
- Department of Electronics and Information Technology (DeitY), Science & Engineering research board [CRG/2018/001012]
- Joint Advanced Technology Centre at IIT Delhi, Grand Challenge Project, IIT Delhi
- Department of Science and Technology [SR/NM/NT1041/2016(G)]
- Council of Scientific and Industrial Research (CSIR), Government of India
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The study reveals a high spin-to-charge conversion effect at the interface between TMD monolayers and ferromagnetic materials, providing new opportunities for the development of spintronic devices.
Spin-to-charge conversion is an essential requirement for the implementation of spintronic devices. Recently, monolayers (MLs) of semiconducting transition-metal dichalcogenides (TMDs) have attracted considerable interest for spin-tocharge conversion due to their high spin-orbit coupling and lack of inversion symmetry in their crystal structure. However, reports of direct measurement of spin-to-charge conversion at TMD-based interfaces are very much limited. Here, we report on the room-temperature observation of a large spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and four distinct large-area (similar to 5 x 2 mm(2)) ML TMDs, namely, MoS2, MoSe2, WS2, and WSe2. We show that both spin mixing conductance and the Rashba efficiency parameter (lambda(IREE)) scale with the spin-orbit coupling strength of the ML TMD layers. The lambda(IREE) parameter is found to range between -0.54 and -0.76 nm for the four ML TMDs, demonstrating a large spin-to-charge conversion. Our findings reveal that the TMD/ferromagnet interface can be used for efficient generation and detection of spin current, opening new opportunities for novel spintronic devices.Y
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