Graphene Nanoribbon Field-Effect Transistors with Top-Gate Polymer Dielectrics

Graphene nanoribbons (GNRs) have demonstrated great potential for nanoscale devices owing to their excellent electrical properties. However, the application of the GNRs in large-scale devices still remains elusive mainly due to the absence of facile, nonhazardous, and nondestructive transfer methods. Here, we develop a simple acid (HF)-free transfer method for fabricating field-effect transistors (FETs) with a monolayer composed of a random network of GNRs. A polymer layer that is typically used as mechanical support for transferring GNR films is utilized as the gate dielectric. The resultant GNR-FETs exhibit excellent FET characteristics with a large on/off switching current ratio of >104. The transfer process enables the demonstration of the first GNRbased nonvolatile memory. The process offers a simple route for GNRs to be utilized in various optoelectronic devices.

Automated summary

Graphene nanoribbons (GNRs) have great potential for nanoscale devices due to their excellent electrical properties. However, the lack of a facile, nonhazardous, and nondestructive transfer method has hindered their application in large-scale devices. In this study, we developed a simple acid (HF)-free transfer method to fabricate field-effect transistors (FETs) with a monolayer composed of a random network of GNRs. The resulting GNR-FETs exhibited excellent FET characteristics and allowed for the demonstration of the first GNR-based nonvolatile memory. This process provides a simple route for the utilization of GNRs in various optoelectronic devices.