High power and high bandwidth CMOS driver for hybrid interconnected GaN microdisplay

GaN technology have been a revolutionary development in the light emitting sources field. Their high efficiency, high bandwidth, high lifetime and high integration capabilities has opened a brand-new research field. Furthermore, the integration of hybrid microdisplays based on GaN-on-Si allowed the development of high efficiency visible light communication devices and new branch of image applications among others. In this work, we present an in-pixel driving circuit with switching capabilities up to 1MHz and LED bias current up to 120 mu A. The pixel driver is designed to be integrated in a 512x512 microdisplay of 1411 ppi with 10kfps working capabilities. The in-pixel driver allows to eliminate the leakage problems of the conventional drivers for hybrid interconnexion, besides having high brightness and high-speed capabilities.

Automated summary

GaN technology has revolutionized the field of light emitting sources, opening up new research opportunities. The integration of GaN-on-Si microdisplays has enabled the development of highly efficient visible light communication devices and image applications. This work presents an in-pixel driving circuit with high brightness and high-speed capabilities, addressing the leakage issues of conventional drivers.