Towards an infrared camera based on polymorphous silicon-germanium microbolometer arrays

In this work we report the development of different parts of an infrared camera, which includes the fabrication of a microbolometer array based on polymorphous silicon-germanium thermosensing films (pm-SiGe:H) with large values of the Thermal coefficient of resistance (TCR), as large as -6.6 %/K. The array is composed of 4800 pixels, distributed as 80 x 60, with each pixels of size of 50 x 50 mu m(2). As well the first stages of the readout circuit based on a FPGA is described, and the infrared filters lens design and the vacuum camera design also are shown.

Automated summary

In this work, the development of different components of an infrared camera is reported, including the fabrication of a microbolometer array with high thermal coefficient of resistance based on polymorphous silicon-germanium thermosensing films, as well as the design of the readout circuit, infrared filters lens, and vacuum camera.