Journal
2022 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/LAEDC54796.2022.9908188
Keywords
Semiempirical model; bipolar resistive switching memory; transport of oxygen ions; conductive filaments; configuration of oxygen vacancies
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Funding
- Consejo Nacional de Ciencia y Tecnologia (CONACYT) of Mexico [869500]
- CONACYT [A1-S-8205]
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This work simulates the stochastic processes of generation/recombination of oxygen ions and oxygen vacancies to study the change in the resistive state of bipolar resistive switching memories. By modeling the active layer as a two-dimensional mesh and proposing an estimation method, the current in different resistive states is calculated.
This work studies the change in the resistive state of bipolar resistive switching memories through a simulation of the stochastic processes of generation/recombination of oxygen ions and oxygen vacancies. The active layer of these devices is modeled as two-dimensional mesh. Once different configurations of oxygen vacancies are obtained by each sweep voltage, we propose a method to estimate the resistive state by a relation based on Mott hopping model for the contribution of each trap chain or conductive filaments. The current is calculated using the Poole-Frenkel effect during high resistive state and space charge limited current by Frenkel effect in low resistive state.
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