☆ 3.8 Proceedings Paper

Investigation on Contacts Thermal Stability for 3D Sequential Integration

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2022)

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Article Engineering, Electrical & Electronic

Experimental Investigation of As Preamorphization Implant on Electrical Property of Ti-Based Silicide Contacts

Shujuan Mao et al.

Summary: This article investigates the impact of As preamorphization implant (PAI) on specific contact resistivity (rho(c)) of Ti-based Ohmic contacts on n+-Si. It shows that low-dose As PAI greatly improves the rho(c) value, while high-dose As PAI impairs the improvement. The study attributes the rho(c) results to a combination of factors including reduction of effective Schottky barrier height, retardation of Ti silicidation, and annihilation of end-of-range (EOR) defects, with interfacial microstructures also playing a role.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Engineering, Electrical & Electronic