Journal
NANO ENERGY
Volume 25, Issue -, Pages 34-41Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nanoen.2016.04.030
Keywords
Few-layer black phosphorene; Chemical doping; P-N junction; Photodetector; Solar cells
Categories
Funding
- Ministry of Education, Singapore [MOE2011-T2-2-147]
- National Basic Research Program of China [2014CB931700]
- NSFC [61222403]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
Ask authors/readers for more resources
Black phosphorene (BP), a newly discovered elemental two-dimensional material, is attractive for optoelectronic and photonic applications because of its unique in-plane anisotropy, thickness-dependent direct bandgap and high carrier mobility. Since its discovery, black phosphorene has become an appealing candidate well-suited for polarization-resolved near- and mid-infrared optoelectronics due to its relative narrow bandgap and asymmetric structure. Here, we employ benzyl viologen (BV) as an effective electron dopant to part of the area of a (p-type) few-layer BP flake and achieve an ambient stable, in plane P-N junction. Chemical doping with BV molecules modulates the electron density and allows acquiring a large built-in potential in this in-plane BP P-N junction, which is crucial for achieving high responsivity photodetectors and high quantum efficiency solar cells. As a demonstrative example, by illuminating it with a near-infrared laser at 1.47 mu M, we observe a high responsivity up to similar to 180 mA/W with a rise time of 15 ms, and an external quantum efficiency of 0.75%. Our strategy for creating environmentally stable BP P-N junction paves the way to implementing high performance BP photo transistors and solar cells, which is also applicable to other 2D materials. (C) 2016 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available