Transistors with High Electron Mobility Based on Gallium-Nitride Heterostructures for Millimeter Wavelengths

Microwave transistors based on AlN/GaN heterostructures on silicon substrates are fabricated and studied. The maximum specific saturation current is more than 1 A/mm and the transconductance is 444 mS/mm. Current gain cut-off frequency f(t) and maximum oscillation frequency f(max) are 124 and 161 GHz, respectively. The power gain is 13.7 dB at 30 GHz.

Automated summary

Microwave transistors based on AlN/GaN heterostructures on silicon substrates were fabricated and studied. The results showed that these transistors exhibit high specific saturation current, good transconductance, and excellent frequency performance.