Hydrodynamic magnetoresistance in graphene Corbino devices

We study hydrodynamic electron magnetotransport in graphene devices. We show that in these systems a distinct mechanism of magnetoresistance appears which is absent in systems with Galilean-invariant electron liquid. The resulting magnetoresistance depends on the intrinsic conductivity and viscosity of the electron liquid, and becomes especially pronounced near charge neutrality. We obtain analytic expressions for magnetotransport coefficients of Corbino devices and obtain estimates for the electrical and thermal magnetoresistances for monolayer and bilayer systems at charge neutrality. Magnetoresistance becomes strong (of order 100 %) at relatively weak fields, at which the kinetic coefficients of the electron liquid are practically unaffected by the magnetic field.

Automated summary

This study focuses on hydrodynamic electron magnetotransport in graphene devices and reveals a distinct mechanism of magnetoresistance that is absent in systems with Galilean-invariant electron liquid. The magnetoresistance is particularly pronounced near charge neutrality and depends on the intrinsic conductivity and viscosity of the electron liquid.