OPTICAL AND MORPHOLOGICAL INVESTIGATIONS OF CHALCOGENIDE GE-SB-TE THIN FILMS

Chalcogenide thin films based on Ge-Sb-Te (GST) are synthesized from elements with 5N purity using the conventional melt-quenching method. The mixture was used as material for deposition on quartz substrate by the chemical vacuum deposition method. Optical and dielectric properties were determined by Spectro-ellipsometry measurements. The optical dispersion parameters are calculated using the single-oscillator model of Wemple- DiDomenico. The dissipation factor, the optical conductivity, the complex electric modulus, and the complex impedance of these GST layers were calculated. The AFM-SEM imagines revealed compact, continuous, and smooth films with good adhesion and uniform granules distribution.

Automated summary

Chalcogenide thin films based on Ge-Sb-Te (GST) were synthesized using the melt-quenching method. The optical and dielectric properties of these films were determined through spectro-ellipsometry measurements. The dissipation factor, optical conductivity, complex electric modulus, and complex impedance were calculated for the GST layers. AFM-SEM images showed that the films were compact, continuous, and smooth with good adhesion and uniform granule distribution.