First Demonstration of Dual-Gated Indium Tin Oxide Transistors with Record Drive Current ∼2.3 mA/μm at L ≈ 60 nm and VDS=1 V

Article Engineering, Electrical & Electronic

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Zhuocheng Zhang et al.

Summary: ITO transistors with atomically thin channel thickness of 2.1 nm achieved by atomic layer deposition (ALD) exhibit high performance with a maximum ON-state current of 970 mA/mm at VDS of 0.8 V and an ON/OFF ratio up to 10(7). Low-temperature annealing affects the electrical performance of the transistors, while the presence of interface states leads to a negative threshold voltage shift.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Article Engineering, Electrical & Electronic

Scaled indium oxide transistors fabricated using atomic layer deposition

Mengwei Si et al.

Summary: Researchers have successfully fabricated high-performance indium oxide transistors with dimensions smaller than advanced silicon technologies using an industry-compatible atomic layer deposition process. This study is significant for improving integrated circuit performance and functionality.

NATURE ELECTRONICS (2022)

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Article Physics, Applied

Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility

Zhuocheng Zhang et al.

Summary: In this work, vertically stacked sub-1-nm In2O3 field-effect transistors (FETs) with surrounding gate are demonstrated, using a low-temperature fabrication process compatible with the back-end-of-line (BEOL) process. Each atomically thin In2O3 channel layer with a thickness of 0.9 nm is fabricated using atomic layer deposition at 225 degrees C. The multilayer FETs with HfO2 capping between each individual layer demonstrate improved on-state current and can achieve an on/off ratio of 3.4 x 10^4. ALD In2O3 exhibits several critical features such as large-area growth, high uniformity, high reproducibility, ultrathin body, flexibility, and BEOL compatibility, making it a promising candidate for next-generation oxide semiconductor channel materials.

APPLIED PHYSICS LETTERS (2022)

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Article Engineering, Electrical & Electronic

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 x 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Mengwei Si et al.

Summary: This study presents back-end-of-line (BEOL) compatible indium-tin-oxide (ITO) transistors with ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) as gate insulator, achieving a high-density 2-D electron gas and high carrier mobility modulation and switching through FE polarization.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Engineering, Electrical & Electronic

High-performance flexible nanoscale transistors based on transition metal dichalcogenides

Alwin Daus et al.

Summary: Flexible nanoscale FETs based on 2D semiconductors are fabricated by transferring transition metal dichalcogenides from rigid growth substrates to polyimide films with nano-patterned metal contacts. The approach allows for channel lengths down to 60 nm and on-state currents up to 470 mu A mu m(-1) at a drain-source voltage of 1 V, demonstrating comparable performance to flexible graphene and crystalline silicon FETs.

NATURE ELECTRONICS (2021)

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Article Chemistry, Multidisciplinary