Journal
2022 IEEE 7TH OPTOELECTRONICS GLOBAL CONFERENCE, OGC
Volume -, Issue -, Pages 167-170Publisher
IEEE
DOI: 10.1109/OGC55558.2022.10050988
Keywords
MUTC-PD; terahertz; high optical power injection
Categories
Funding
- National key research & development (RD) plan [2020YFB1805701, 2019YFB2203801]
- Zhejiang Lab grant [2020LC0AD02/001, 2020LC0AD01/001]
- National Natural Science Foundation of China [61974132]
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In this study, we simulated InGaAs/InP Modified Uni-Traveling-Carrier Photodiodes (MUTC-PDs) under high optical power injection with different reverse bias voltages. By optimizing the absorber layer structure and the operating voltage, we achieved an MUTC-PD design with a opto-electric responsivity of 0.16A/W and over 300GHz 3-dB bandwidth under 10 mW/μm^2 optical injection density.
We simulated InGaAs/InP Modified Uni-TravelingCarrier Photodiodes (MUTC-PDs) with different reverse bias voltages under high optical power injection, using a commercial device level simulator Apsys. By optimizing the absorber layer structure and the operating voltage, this work achieved an MUTC-PD design with an opto-electric responsivity of 0.16A/W and over 300GHz 3-dB bandwidth under 10 mW/mu m(2) optical injection density.
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