4.6 Article

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 4, Issue 11, Pages 2111-2116

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5tc04410c

Keywords

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Funding

  1. National Basic Research Program of China [2015CB932600]
  2. National Natural Science Foundation of China [21322106, 51472097, 51402114]
  3. Program for New Century Excellent Talents in University [NCET-13-0227]
  4. Program for HUST Interdisciplinary Innovation Team
  5. Fundamental Research Funds for the Central University

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Ultrathin SnS nanobelts were synthesized via physical vapor deposition (PVD). Furthermore, high performance near-infrared (NIR) photodetectors based on SnS nanobelts showed an excellent photoresponsivity of 300 A W-1 under 800 nm light illumination with an external quantum efficiency of 4.65 x 10(4)% and a detectivity of 6 x 10(9) Jones, as well as fast rise and decay times (tau(rise) = 36 ms and tau(decay) = 7 ms), suggesting a promising future for the utilization of the SnS nanobelts in practical NIR light sensors.

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