Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 4, Issue 20, Pages 4568-4576Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc00875e
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Funding
- ONR
- National Basic Research Program of China [2013CB632900]
- National Natural Science Foundation of China [50972071, 51172118]
- Tsinghua University Initiative Scientific Research Program
- State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing, China
- China Scholarship Council
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The incorporation of acceptor dopants and the resulting internal bias in Pb(Zr,Ti)O-3 (PZT) piezoelectric ceramics lead to reduced electrical and mechanical losses, but at the expense of decreased electromechanical properties. Analogous to PZTs, acceptor doped relaxor-PbTiO3 (relaxor-PT) single crystals show an improved mechanical quality factor (decreased mechanical loss), but with a minimal impact on the electromechanical properties. In this research, the internal bias and associated impacts on electromechanical properties were studied in Mn-doped Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 (Mn:PIN-PMN-PT) single crystals, showing strong crystallographic orientation dependent behaviors. By active control of defect dipoles through domain engineering, different defect dipole configurations were obtained (defect dipole engineering), leading to the unique characteristics of relaxor-PT single crystals when compared to the conventional polycrystalline ferroelectric ceramics.
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