4.6 Article

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Related references

Note: Only part of the references are listed.
Article Chemistry, Physical

Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films

Ranjith K. Ramachandran et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2015)

Article Physics, Condensed Matter

Evaluation of the Tauc method for optical absorption edge determination: ZnO thin films as a model system

Brian D. Viezbicke et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)

Article Chemistry, Multidisciplinary

Low-temperature fabrication of high performance indium oxide thin film transistors

You Meng et al.

RSC ADVANCES (2015)

Article Nanoscience & Nanotechnology

Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrOx Dielectric

Ao Liu et al.

ACS APPLIED MATERIALS & INTERFACES (2014)

Article Physics, Applied

Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies

Nobuhiko Mitoma et al.

APPLIED PHYSICS LETTERS (2014)

Article Chemistry, Physical

The Structure and Properties of Amorphous Indium Oxide

D. Bruce Buchholz et al.

CHEMISTRY OF MATERIALS (2014)

Article Materials Science, Multidisciplinary

High mobility In2O3 :H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

B. Macco et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2014)

Article Physics, Applied

Hydrogen-incorporated ZnO nanowire films: stable and high electrical conductivity

Ajay Kushwaha et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2013)

Article Engineering, Electrical & Electronic

Self-assembled homojunction In2O3 transparent thin-film transistors

Florin Gherendi et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2013)

Proceedings Paper Physics, Condensed Matter

Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers

Dhananjaya Kekuda et al.

SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B (2011)

Article Engineering, Electrical & Electronic

Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature

Joo Hyon Noh et al.

IEEE ELECTRON DEVICE LETTERS (2010)

Article Electrochemistry

Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films

S. E. Potts et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2010)

Review Materials Science, Multidisciplinary

Material characteristics and applications of transparent amorphous oxide semiconductors

Toshio Kamiya et al.

NPG ASIA MATERIALS (2010)

Article Engineering, Electrical & Electronic

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

Toshio Kamiya et al.

JOURNAL OF DISPLAY TECHNOLOGY (2009)

Article Materials Science, Multidisciplinary

Thin films of In2O3 by atomic layer deposition using In(acac)3

O. Nilsen et al.

THIN SOLID FILMS (2009)

Article Physics, Applied

Stable indium oxide thin-film transistors with fast threshold voltage recovery

Yuriy Vygranenko et al.

APPLIED PHYSICS LETTERS (2007)

Article Physics, Applied

Realization of In2O3 thin film transistors through reactive evaporation process

Dhananjay et al.

APPLIED PHYSICS LETTERS (2007)

Article Physics, Multidisciplinary

Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides

Stephan Lany et al.

PHYSICAL REVIEW LETTERS (2007)

Article Electrochemistry

Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor

J. L. van Hemmen et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2007)

Article Chemistry, Physical

High-performance transparent inorganic-organic hybrid thin-film n-type transistors

Lian Wang et al.

NATURE MATERIALS (2006)

Article Electrochemistry

Characteristics of ZnO thin films by means of plasma-enhanced atomic layer deposition

Sang-Hee Ko Park et al.

ELECTROCHEMICAL AND SOLID STATE LETTERS (2006)

Article Physics, Applied

The origin of n-type conductivity in undoped In2O3 -: art. no. 051911

T Tomita et al.

APPLIED PHYSICS LETTERS (2005)

Article Electrochemistry

Electrical properties of alumina films by plasma-enhanced atomic layer deposition

JW Lim et al.

ELECTROCHEMICAL AND SOLID STATE LETTERS (2004)

Article Materials Science, Multidisciplinary

Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction

JW Klaus et al.

THIN SOLID FILMS (2000)