Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 4, Issue 9, Pages 1838-1841Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5tc04223b
Keywords
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Funding
- National Natural Science Foundation of China [61405089]
- Basic Research Program of Science, Technology and Innovation Commission of Shenzhen Municipality [JCYJ20140417105742713]
- Special Support Program for Young Talent Scholar of Guangdong Province [2014TQ01X015]
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Transparent, all-solution processed quantum-dot light-emitting diodes (QD-LEDs) are developed in this work. Indium-tin-oxide (ITO) fabricated by sputtering is adopted as transparent electrodes for the QD-LEDs. To reduce the plasma damage caused by sputtering, ZnO nanocrystals with a thickness of 82 nm are employed as the buffer layer and the electron transport layer. As a result, damage-free QD-LEDs are demonstrated with a high averaged transparency of 70%. The transparent QD-LEDs exhibit an external quantum efficiency of 5% (current efficiency of 7 cd A(-1)), which is comparable to that of the devices with conventional Al electrodes.
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