The Sensitive Region of Displacement Damage in LPNP Induced by Various Charged Particles

In this paper, the sensitive region of displacement damage in LPNP induced by 10 MeV Si ions, 40 MeV Si ions and 3 MeV protons is investigated. Electrical parameters are measured in-situ using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation-induced defects caused by various ions are characterized by deep level transient spectroscopy (DLTS). Experimental results show that with irradiation fluence of various particles increases, the excess base current increases and the ideality factor does not change and is close to 2. The change in the reciprocal of current gain of LPNP transistors caused by the three types of particles can be normalized in one line when Si/SiO2 interface rather than base region is considered as the sensitive region of the displacement damage. DLTS results show radiation defects in LPNP transistors caused by the three types of particles are main interface traps, determining that the Si/SiO2 interface becomes a radiation sensitive region of the LPNP devices.

Automated summary

This paper investigates the sensitive region of displacement damage in LPNP induced by 10 MeV Si ions, 40 MeV Si ions, and 3 MeV protons. Electrical parameters are measured in-situ during irradiation, and deep level transient spectroscopy (DLTS) is used to characterize the radiation-induced defects. Experimental results show that the excess base current increases with increasing irradiation fluence, while the ideality factor remains constant. The change in the reciprocal of current gain can be normalized in one line when considering the Si/SiO2 interface as the sensitive region. DLTS results indicate that the radiation defects in LPNP devices caused by these particles are mainly interface traps.