Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 4, Issue 31, Pages 12080-12087Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ta04503k
Keywords
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Funding
- U.S. Department of Energy (DOE) SunShot Initiative under the Next Generation Photovoltaics 3 program [DE-FOA-0000990, DE-AC36-08-GO28308]
- National Science Foundation [CHE-1230246, DMR-1534686]
- Ohio Research Scholar Program
- Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
- National Basic Research Program of China [2011CB933300]
- National Science Fund for Distinguished Young Scholars [50125309]
- National Natural Science Foundation of China [51272184, 91433203]
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Recent progress has shown that low-temperature processed tin oxide (SnO2) is an excellent electron selective layer (ESL) material for fabricating highly efficient organic-inorganic metal-halide perovskite solar cells with a planar cell structure. Low-temperature processing and a planar cell structure are desirable characteristics for large-scale device manufacturing due to their associated tow costs and processing simplicity. Here, we report that plasma-enhanced atomic layer deposition (PEALD) is able to lower the deposition temperature of SnO2 ESLs to below 100 degrees C and still achieve high device performance. With C-60-self-assembled monolayer passivation, our PEALD SnO2 ESLs deposited at similar to 100 degrees C led to average power conversion efficiencies higher than 18% (maximum of 19.03%) and 15% (maximum of 16.80%) under reverse voltage scan for solar cells fabricated on glass and flexible polymer substrates, respectively. Our results thus demonstrate the potential of the low-temperature PEALD process of SnO2 ESLs for large-scale manufacturing of efficient perovskite solar cells.
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