Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 4, Issue 34, Pages 13171-13175Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ta04240f
Keywords
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Funding
- National Natural Science Foundation of China [51572098, 51272080]
- National Basic Research Program of China [2013CB632500]
- Natural Science Foundation of Hubei Province [2015CFB432]
- Open Fund of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- Wuhan University of Technology [2016-KF-5]
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We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of states effective mass. The lattice thermal conductivity was also greatly reduced as a result of the wide frequency range of phonon scattering by multiscale architectures derived from Bi doping. A maximum ZT value of c. 1.1 at 873 K was obtained in Sn0.94Bi0.06Te, an enhancement of 165% compared with the undoped sample.
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