High-temperature energy storage dielectric with inhibition of carrier injection/migration based on band structure regulation

Dielectric capacitors have a high power density, and are widely used in military and civilian life. The main problem lies in the serious deterioration of dielectric insulation performance at high temperatures. In this study, a polycarbonate (PC)-based energy storage dielectric was designed with BN/SiO2 heterojunctions on its surface. Based on this structural design, a synergistic suppression of the carrier injection and transport was achieved, significantly improving the insulating properties of the polymer film. In particular, the composite film achieves optimal high-temperature energy-storage properties. The composite film can withstand an electric field intensity of 760 MV m(-1) at 100 degrees C and obtain an energy storage density of 8.32 J cm(-3), while achieving a breakthrough energy storage performance even at 150 degrees C (610 MV m(-1), 5.22 J cm(-3)). Through adjustment of the heterojunction structure, free adjustment of the insulation performance of the material can be realized; this is of great significance for the optimization of the material properties.

Automated summary

In this study, a polycarbonate-based energy storage dielectric with BN/SiO2 heterojunctions was designed to improve the insulation performance at high temperatures. The composite film showed excellent high-temperature energy storage properties, with the ability to withstand high electric field intensity even at 150 degrees C.