A High Efficiency Class AB AlGaN/GaN HEMT Power Amplifier for High Frequency Applications

GaN HEMT is chosen for many high frequency applications such as Power Amplifiers because of its desirable properties. Most semiconductors fail at high frequency applications because of their thermal and bias limitations. It is very difficult to operate the amplifier at high frequency and high power ratings. The HEMT transistors can operate at high electric fields and high frequencies. The heterojunction structure provides more no of free electrons without any doping which significantly improves the mobility and the current. The hetero-structure also blocks the current flow in unwanted directions. This paper explains about GaN HEMT transistor and its practical application as a Power Amplifier. CREE CGH40010F GaN (10 W) device is chosen and developed at the schematic level. The schematic provides 15.5 dB gain and 66% efficiency.

Automated summary

GaN HEMT is a preferred choice for high frequency applications like Power Amplifiers due to its desirable properties. Unlike other semiconductors, it can operate at high frequencies and high power ratings. The heterojunction structure of GaN HEMT provides more free electrons and blocks current flow in unwanted directions. This paper discusses the GaN HEMT transistor and its practical application as a Power Amplifier.