Terahertz Oscillator Chips Backside-Coupled to Unclad Microphotonics

Terahertz technology is largely dependent upon planar on-chip antennas that radiate downwards through the substrate, and so an effective means to interface these antennas with integrated waveguides is an attractive prospect. We present a viable methodology for backside coupling between a terahertz oscillator chip and a broadband all-intrinsic-silicon dielectric waveguide. Our investigation employs resonant tunneling diodes as compact two-terminal electronic terahertz oscillators, and terahertz waves are observed from 270 GHz to 404 GHz. The fact that this power is accessed via a curved length of silicon waveguide validates successful backside coupling.

Automated summary

This study presents an effective method for connecting a terahertz oscillator chip with a broadband all-intrinsic-silicon dielectric waveguide through backside coupling. By using resonant tunneling diodes as compact electronic terahertz oscillators, terahertz waves from 270 GHz to 404 GHz were successfully observed.