4.6 Article

Induced in-plane magnetic anisotropy in Co/WS2 bilayer

Journal

MATERIALS LETTERS
Volume 352, Issue -, Pages -

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ELSEVIER
DOI: 10.1016/j.matlet.2023.135161

Keywords

Magnetic anisotropy; Transition metal dichalcogenides; Thin films; Interfaces

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In this study, the effects of a two-dimensional WS2 layer on the structural and magnetic properties of a cobalt (Co) thin film were investigated. The results showed that the Co layer grown on the WS2 layer had a crystal structure, while the individual Co isolated layer was amorphous. The magnetic hysteresis loop and magnetoresistance measurements revealed the presence of in-plane magnetic anisotropy in the Co/WS2 bilayer, which could be attributed to the formation of Co crystallinity grown on WS2 and orbital hybridization at the Co/WS2 interface.
Here, the effects of the two-dimensional WS2 layer on the structural and magnetic properties of cobalt (Co) thin film is investigated in a Co/WS2 bilayer fabricated on Si (100) substrates. The Co layer grown on the WS2 layer formed a crystal structure whereas that individual Co isolated layer is amorphous. The magnetic hysteresis loop and magnetoresistance measurements show that there is an in-plane magnetic anisotropy in the Co/WS2 bilayer. We suggest that the observed anisotropy could be caused by the formation of Co crystallinity grown on WS2 and orbital hybridization at the Co/WS2 interface. Our results represent an interface control of anisotropy in twodimensional structures.

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