Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices

Vanadium dioxide (VO2) is a representative metal-insulator-transition (MIT) material that undergoes a reversible phase transition at 68 degrees C, which is close to room temperature. This shows the bias-triggered volatile resistance changes driven by MIT so that many studies have been made to implant VO2 as selectors for solving the sneak current problem of resistive random-access memory (ReRAM). However, the non-volatile switching of VO2 for non-volatile memory (NVM) application has not been demonstrated yet but if realized, this is truly breakthrough for low power and ultrafast NVM application. Herein, we report a successful formation of multiphase vanadium oxide on Si wafer via atomic layer deposition followed by a post-deposition annealing (PDA) process and demonstrate its applicability as a NVM device. It was confirmed that the multiphase vanadium oxide has MIT driven abrupt resistance switching (i.e., low-and high-resistance state) at & PLUSMN; 1.6 V due to increased oxygen vacancies responsible for non-volatile memory property. The alternating current (AC) endurance upto 30,000 cycles and charge retention upto 3,000 sec are achieved at 2x102 of LRS/HRS current ratio. As a result, it opens the possibility of application to next-generation memory devices by reliable non-volatile MIT switching scheme.

Automated summary

This study successfully fabricated multiphase vanadium oxide and demonstrated its applicability as a non-volatile memory device. The multiphase vanadium oxide exhibits MIT-driven abrupt resistance switching and has high endurance and charge retention, making it a promising candidate for next-generation memory devices.