Journal
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume 6, Issue 2, Pages 348-350Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2016.2520202
Keywords
AlGaN/GaN HEMTs; field-effect transistors; plasma-wave-based detection; submillimeter-wave integrated circuits; terahertz radiation detector
Funding
- Deutsche Forschungsgemeinschaft [LI 1280/3-1]
- Leibniz-Gemeinschaft
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This letter reports on the influence of illumination conditions on the detector response of three-terminal devices. Antenna-coupled field-effect transistors for the plasmonic detection of THz radiation (TeraFETs) were realized using a 0.25-mu m AlGaN/GaN process. Integrated bow-tie antennas are connected to the source, drain and gate terminals of electrically identical transistors in various ways. If radiation power is coupled symmetrically to the source and drain sides of the transistors' channels, TeraFETs become sensitive to gradient-intensity of the illumination power. It is found that fully asymmetric coupling, nontrivial to ensure at THz-frequencies, is required for a pure response to incident power.
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