Low-noise balanced mixer for 300-GHz band based on Fermi-level managed barrier diode on SiC platform

We developed a terahertz-wave balanced mixer fabricated on a SiC substrate using epi-layer-transferred InP/InGaAs Fermi-level managed barrier (FMB) diodes. The FMB diodes were monolithically integrated with waveguide couplers, a 90-degree hybrid circuit, and low-pass filters. The fabricated mixer was then assembled in a two -input-port module with a broadband transimpedance amplifier and exhibited an intermediate frequency bandwidth of about 26 GHz with good inter-port isolations of more than 13 dB. The obtained minimum noise equivalent power was as low as 2 x 10(-19) W/Hz in the fundamental mixing mode at around 300 GHz for a local-oscillator power of about 400 .W.

Automated summary

In this study, a terahertz-wave balanced mixer was developed on a SiC substrate using epi-layer-transferred InP/InGaAs Fermi-level managed barrier diodes. The mixer exhibited a wide intermediate frequency bandwidth and high inter-port isolations. It also achieved a low noise equivalent power at high local-oscillator power.