Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 6, Issue 2, Pages 460-464Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2015.2504790
Keywords
Heterojunction; indium gallium nitride (InGaN); molecular beam epitaxy (MBE); photovoltaic cell; semiconductor epitaxial layer; solar cell
Funding
- National Science Foundation (NSF)
- Department of Energy [NSF CA EEC-1041895]
- Advanced Research Projects Agency-Energy, U.S. Department of Energy [DE-AR0000470]
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This paper investigates the molecular beam epitaxy (MBE) growth, material characterization, and performance testing of indium gallium nitride (InGaN)/GaN double-heterojunction solar cells. Structureswith varying thicknesses and compositions of the InGaN absorbing layer are studied. The N-rich MBE growth at low temperatures enables the growth of thick 10% and 20% InGaN films with minimal strain relaxation and defect generation. The characteristics of both large-and small-area devices are compared. While leakage current and high ideality factors associated with the double-heterojunction structure remain issues as detected by I-V and concentration effect measurements, the double-heterojunction cell with a record-high In content of 22% shows a promising photovoltaic response.
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