Topological phenomena at the oxide interfaces

Topological phenomena at the oxide interfaces attract the scientific community for the fertile ground of exotic physical properties and highly favorable applications in the area of high-density low-energy nonvolatile memory and spintronic devices. Synthesis of atomically controlled ultrathin high-quality films with superior interfaces and their characterization by high resolution experimental set up along with high output theoretical calculations matching with the experimental results make this field possible to explain some of the promising quantum phenomena and exotic phases. In this review, we highlight some of the interesting interface aspects in ferroic thin films and heterostructures including the topological Hall effect in magnetic skyrmions, strain dependent interlayer magnetic interactions, interlayer coupling mediated electron conduction, switching of noncollinear spin texture etc. Finally, a brief overview followed by the relevant aspects and future direction for understanding, improving, and optimizing the topological phenomena for next generation applications are discussed.

Automated summary

This review focuses on the topological phenomena at oxide interfaces and their applications in high-density low-energy nonvolatile memory and spintronic devices. The synthesis of high-quality ultrathin films and their characterization through experimental and theoretical methods have allowed the explanation of promising quantum phenomena and exotic phases. The review also discusses interesting interface aspects in ferroic thin films and heterostructures, and provides an overview of future research directions.