4.4 Article

Highly Sensitive, Low Operating Power Cardiac Troponin Biosensor Using PANI Nanofiber OFET

Journal

IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 22, Issue -, Pages 558-563

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2023.3312819

Keywords

Organic field effect transistor; polyaniline nanofibers; cardiac troponin biosensor; limit of detection; low threshold voltage

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Cardiovascular diseases are responsible for the largest number of deaths globally, with over 17 million people dying each year. In this study, researchers have developed a highly sensitive biosensor using a polyaniline nanofiber organic field effect transistor (OFET) for the detection of the regulatory protein cTnI, which is released into the blood following heart muscle injury. The OFET demonstrated high sensitivity and a low detection limit, making it a promising tool for detecting myocardial infarction.
Cardiovascular diseases (CVDs) are the leading cause of death worldwide, killing over 17 million people yearly. A key biomarker for identifying myocardial infarction (MI) is the regulatory protein Cardiovascular Troponin I (cTnI), released into the blood following heart muscle injury. Significant efforts have been made in recent years to develop highly sensitive biosensors for the detection of cTnI. Field effect transistors (FETs) in general and organic FETs (OFETs) in specific have shown computability in detecting such cordial protein. In this study, we provide a complete attempt to fabricate and characterize polyaniline nanofiber (PANI-NFs) OFETfor biosensing applications. TheFTIRspectrum of PANI-NFs is examined before and after pAbs immobilization. To study the biosensor performance parameters, the biomarker drain current is investigated against the cTnI biomarker concentrations. The proposed OFET recorded high sensitivity of 484 nA.(g/mL)(-1), with a minimum detection limit (0.36 pg/mL) and power consumption varying from 7 mu W to 11.4 mu W. Finally, the biosensing repeatability was examined regarding variation in the P-FET device and the biasing conditions.

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