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Summary: This study designs a UV photodetector that utilizes a two-dimensional electron gas at the AlGaN/GaN interface with an AlGaN symmetrical interdigital structure. The AlGaN interdigital structure is fabricated with a Ti/Al/Ti/Au metal stack for ohmic contacts. The interdigital AlGaN/GaN heterostructure enhances the polarization electric field in the GaN absorption layer, facilitating the separation and transport of photogenerated carriers. The polarization-enhanced physical mechanism of the AlGaN/GaN 2DEG UV PD is explored through theoretical simulations. The designed UV PD exhibits a broadband characteristic with a response spectra from 300 to 365 nm and a cutoff wavelength of 365 nm, matching the bandgap wavelength of GaN. The normalized photocurrent-to-dark current ratio (NPDR) of 1.31 x 10(9) W-1 is measured at 10 V.
IEEE TRANSACTIONS ON ELECTRON DEVICES
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Summary: In this study, a p-CuI/n-TiO2 heterostructure photodetector was constructed by growing cuprous iodide film on TiO2 nanorods array using thermal evaporation technology. The device exhibits self-powering and sensitivity to light in the range of 320nm to 450nm. It shows a high on/off ratio, a peak responsivity of approximately 4.5mA/W, and a peak detectivity of 1.08x10(11) Jones at 0V. The heterojunction photodetector also demonstrates excellent reproducibility and stability.
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Xi Tang et al.
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