4.6 Article

A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices

Related references

Note: Only part of the references are listed.
Article Chemistry, Multidisciplinary

Van der Waals Nonlinear Photodetector with Quadratic Photoresponse

Xiaoqing Chen et al.

Summary: A quadratically nonlinear photodetector (QNPD) composed of a van der Waals (vdW) stacked GaSe/InSe heterostructure is reported in this study. The QNPD exhibits unique electronic and optical attributes and extends the photodetection wavelength range from 900 to 1750 nm due to the extra second-harmonic generation (SHG) process in GaSe/InSe. It is highly sensitive to the variation of optical intensity and can be used as an autocorrelator for measuring ultrafast pulse widths and an optoelectronic mixer for signal processing.

NANO LETTERS (2023)

Review Chemistry, Multidisciplinary

Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices

Sikandar Aftab et al.

Summary: The piezo-phototronic effect has the potential to enhance the performance of 2D semiconductor-based flexible optoelectronics, leading to new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition influence this effect on a transparent, ultrasensitive, and flexible van der Waals heterostructure, allowing the use of intrinsic semiconductors like 2D transition metal dichalcogenides (TMD). This review article discusses the latest and most promising TMD-based photodetectors and piezo-phototronic devices, which can enable the development of flexible, self-powered sensors and wearable electronics for health monitoring.

SMALL (2023)

Article Chemistry, Multidisciplinary

High performance 1D-2D CuO/MoS2 photodetectors enhanced by femtosecond laser-induced contact engineering

Jinpeng Huo et al.

Summary: This study demonstrates a novel BN-encapsulated CuO/MoS2 2D-1D van der Waals heterostructure photodetector with significantly improved interfacial contact and photodetection capabilities. The device shows highly sensitive, gate-tunable, and robust photoelectronic properties, and h-BN encapsulation effectively protects the device from electrical depletion by gas molecules, greatly improving stability and service life.

MATERIALS HORIZONS (2023)

Article Optics

Perovskite/GaAs-nanowire hybrid structure photodetectors with ultrafast multiband response enhancement by band engineering

Xiaobing Hou et al.

Summary: We have developed a hybrid structure photodetector that combines one-dimensional inorganic GaAs nanowires with two-dimensional organic perovskite materials. This photodetector achieves various performance enhancements using a relatively simple structure. By utilizing the optical absorption enhancement of perovskite and the type-II energy band structure formed by the heterostructure, the responsivity and detectivity of the photodetector from ultraviolet to visible wavelengths are significantly enhanced.

PHOTONICS RESEARCH (2023)

Review Multidisciplinary Sciences

How to characterize figures of merit of two-dimensional photodetectors

Fang Wang et al.

Summary: This article proposes practical guidelines for characterizing the performance of 2D photodetectors and analyzes common situations where their performance can be misestimated.

NATURE COMMUNICATIONS (2023)

Article Nanoscience & Nanotechnology

Bidirectional Photoresponse in a Mixed-Dimensional MoS2/Ge Heterostructure and Its Optic-Neural Synaptic Behavior for Colored Pattern Recognition

Yichi Zhang et al.

Summary: In this study, a junction field-effect transistor based on a two-dimensional MoS2/three-dimensional Ge heterojunction structure is introduced. The heterojunction gate allows efficient electrostatic gate control and eliminates hysteresis, making it suitable for high-performance electronic circuit applications. By utilizing the visible absorptive MoS2 channel and the infrared absorptive Ge gate, simultaneous positive photoresponse to visible light and negative photoresponse to infrared light are achieved. The developed optoelectronic neural network based on the device's optical stimulation-controlled synaptic behaviors shows high recognition accuracy for visible and near-infrared patterns. These findings provide a new pathway for realizing novel multi-wavelength neuromorphic visual systems.

ACS PHOTONICS (2023)

Article Materials Science, Multidisciplinary

Graphene-black phosphorus printed photodetectors

S. Akhavan et al.

Summary: By combining the techniques of chemical vapor deposition (CVD) and liquid phase exfoliation (LPE), the limitations of LPE-based printed optoelectronic devices, such as mobility, defects, and trap states, can be overcome. We used black phosphorus inks and Ag ink to prepare photodetectors via inkjet printing, achieving high performance in terms of external responsivity. This approach was also successfully applied to fabricate flexible photodetectors on polyester fabric, showing promise for wearable and flexible applications.

2D MATERIALS (2023)

Article Materials Science, Multidisciplinary

Two-dimensional perovskite Pb 2 Nb 3 O 10 photodetectors

Yong Zhang et al.

Summary: We report high-performance two-dimensional perovskite Pb 2 Nb 3 O 10 photodetectors (PNO PDs) for the first time. Few-layer PNO nanosheets were successfully obtained through a simple calcination and liquid exfoliation method. Individual PNO nanosheet devices with various structures (Au-PNOAu, Au-PNO-Ti, Ti-PNO-Ti) were fabricated and investigated. The Au-PNO-Ti device exhibited a high rectification factor and excellent self-powered performance.

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY (2023)

Article Nanoscience & Nanotechnology

Influence of the Device Structure on the Electrical and Photodetector Properties of n-MoS2/p-GaSe Heterojunction Optoelectronic Devices

Xiaoxiang Wu et al.

Summary: A strategy of designing the structure of van der Waals heterojunction devices was introduced in this study, leading to the successful fabrication of three devices based on MoS(2)/GaSe heterojunctions. The results showed that device-III effectively reduced electron recombination in GaSe flakes, resulting in an electron-dominated channel current and improved electrical performance compared to device-I and device-II. A photodetector based on device-III also exhibited high performance in self-driven photodetection under 532 nm light irradiation. The findings provide a pathway to significantly improve the electrical properties of optoelectronic devices based on 2D material heterostructures.

ACS APPLIED NANO MATERIALS (2023)

Article Nanoscience & Nanotechnology

High-Responsivity Gate-Tunable Ultraviolet-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed-Dimensional (2D-0D) Heterostructure

Shubhrasish Mukherjee et al.

Summary: This study has made important progress in the field of photodetectors. Highly stable, eco-friendly, and cost-effective transition-metal dichalcogenide (TMDC) quantum dots (QDs) were synthesized and used to fabricate a superlarge and stable phototransistor with chemical vapor deposited (CVD) graphene as the active channel. The phototransistor showed extraordinary stability and durability under ambient conditions without any degradation of photocurrent for up to 4 months after fabrication.

ACS APPLIED MATERIALS & INTERFACES (2022)

Article Chemistry, Multidisciplinary

Highly Efficient Full van der Waals 1D p-Te/2D n-Bi2O2Se Heterodiodes with Nanoscale Ultra-Photosensitive Channels

Weijun Wang et al.

Summary: This research reports a heterodiode with a nanoscale ultra-photosensitive channel assembled using van der Waals materials. The device demonstrates excellent photodetection performances under 100 mV reverse bias or self-power mode, and reveals a superlinear photoelectric conversion phenomenon.

ADVANCED FUNCTIONAL MATERIALS (2022)

Article Chemistry, Multidisciplinary

Work-Function-Tunable MXenes Electrodes to Optimize p-CsCu2I3/n-Ca2Nb3-xTaxO10 Junction Photodetectors for Image Sensing and Logic Electronics

Jiaxin Chen et al.

Summary: In this work, the work function of MXene is tuned through surface modification, leading to the development of high-performance optoelectronic devices. The constructed photodetectors show great potential for image sensing and UV communication.

ADVANCED FUNCTIONAL MATERIALS (2022)

Article Chemistry, Multidisciplinary

Non-Ultrawide Bandgap Semiconductor GaSe Nanobelts for Sensitive Deep Ultraviolet Light Photodetector Application

Chun-Yan Wu et al.

Summary: This paper reports the fabrication of a sensitive deep ultraviolet (DUV) photodetector using GaSe nanobelts, which exhibits high photoresponse and photoconductive gain, and can also function as an effective image sensor.

SMALL (2022)

Article Nanoscience & Nanotechnology

Van der Waals Heterostructure Photodetectors with Bias-Selectable Infrared Photoresponses

Tian-Yun Chang et al.

Summary: This study demonstrates the potential of using band-engineered van der Waals hetero-structures as bias-selectable photodetectors. By tuning the bias polarity, the spectral photoresponse can be switched between different bands, showing high external quantum efficiency and fast operation speed.

ACS APPLIED MATERIALS & INTERFACES (2022)

Article Chemistry, Multidisciplinary

Efficient Avalanche Photodiodes with a WSe2/MoS2 Heterostructure via Two-Photon Absorption

Bongkwon Son et al.

Summary: This study experimentally demonstrates the ultrahigh responsivity of two-dimensional materials-based two-photon absorption avalanche photodiodes, paving the way for practical and high-efficiency infrared photodetectors based on 2D materials.

NANO LETTERS (2022)

Article Chemistry, Multidisciplinary

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

Wei Wang et al.

Summary: A gate-tunable and anti-ambipolar phototransistor based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions is reported. The device shows asymmetric control over anti-ambipolar transfer characteristics, enabling electronic functions and gate-tunability of the photoresponse. It exhibits high-performance photodetection and photovoltaic response.

ACS NANO (2022)

Article Multidisciplinary Sciences

High-temperature flexible WSe2 photo-detectors with ultrahigh photoresponsivity

Yixuan Zou et al.

Summary: This study reports a high-temperature photodetector with unconventional negative photoconductivity and high photoresponsivity. The device demonstrates excellent performance in harsh environments, showing both high temperature endurance and flexibility, which is promising for future development of optoelectronic devices.

NATURE COMMUNICATIONS (2022)

Article Chemistry, Multidisciplinary

van der Waals integration of mixed-dimensional CeO2@Bi heterostructure for high-performance self-powered photodetector with fast response speed

Xinlin Liu et al.

Summary: In this research, a mixed-dimensional van der Waals heterostructure (vdWH) CeO2@Bi was synthesized through a facile hydrothermal method. The resulting photodetector showed self-powered photodetection capability with fast photoresponse speed and high photocurrent and photoresponsivity under 365 nm illumination. Additionally, good long-term cycle stability was observed in a harsh environment.

NANOSCALE (2022)

Article Chemistry, Multidisciplinary

Self-Driven WSe2/Bi2O2Se Van der Waals Heterostructure Photodetectors with High Light On/Off Ratio and Fast Response

Peng Luo et al.

Summary: This study reports a WSe2/Bi2O2Se Van der Waals p-n heterostructure with superior performance in photodetection, showing promising potentials for high-performance self-driven photodetector applications.

ADVANCED FUNCTIONAL MATERIALS (2021)

Article Chemistry, Multidisciplinary

Fabrication of 1D Te/2D ReS2 Mixed-Dimensional van der Waals p-n Heterojunction for High-Performance Phototransistor

Jia-Jia Tao et al.

Summary: By employing mixed-dimensional heterojunction technology, a high-performance Te/ReS2 photodetector has been successfully fabricated, demonstrating superior sensitivity, fast response speed, and high responsivity and detectivity compared to pristine Te and ReS2 photodetectors.

ACS NANO (2021)

Article Chemistry, Multidisciplinary

1D p-n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis

Emad Najafidehaghani et al.

Summary: Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides were fabricated using a scalable one-pot chemical vapor deposition process, and their applications as rectifiers, solar cells, and optoelectronic devices were demonstrated.

ADVANCED FUNCTIONAL MATERIALS (2021)

Article Nanoscience & Nanotechnology

Gate-Tunable Photodiodes Based on Mixed-Dimensional Te/MoTe2 Van der Waals Heterojunctions

Dongyang Zhao et al.

Summary: The mixed-dimensional van der Waals heterostructure photodiode made up of a 1D tellurium nanowire and a 2D molybdenum ditelluride flake demonstrates forward and backward rectifying characteristics, broad spectral response, ultrahigh external quantum efficiency, and controllable response time. These heterojunctions combining the advantages of 1D and 2D semiconductors will promote the development of next-generation electronics and optoelectronics.

ADVANCED ELECTRONIC MATERIALS (2021)

Article Multidisciplinary Sciences

Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

Meng Peng et al.

Summary: This study focuses on the potential of highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets synthesized by chemical vapor deposition in blackbody-sensitive infrared detection. The Te nanostructures exhibit high hole mobility and broadband detection, achieving high responsivity and blackbody responsivity, contributing to the advancement of high-resolution imaging technology.

SCIENCE ADVANCES (2021)

Article Chemistry, Multidisciplinary

Self-Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

Weidong Song et al.

Summary: A self-powered, high-performance Ti3C2Tx MXene/GaN van der Waals heterojunction-based ultraviolet photodiode with outstanding quantum efficiency and rapid response speed is reported, showing remarkable photovoltaic behavior and power conversion efficiency.

ADVANCED MATERIALS (2021)

Article Engineering, Electrical & Electronic

Unipolar barrier photodetectors based on van der Waals heterostructures

Yunfeng Chen et al.

Summary: Band-engineered van der Waals heterostructures are able to construct high room-temperature detectivity detectors for visible light and blackbody infrared light by blocking dark current without suppressing photocurrent. Utilizing two-dimensional materials with self-passivated surfaces and tunable band structures, unipolar barriers can be designed to avoid lattice mismatch and interface defects, achieving low dark current and high detectivity in photodetectors.

NATURE ELECTRONICS (2021)

Article Chemistry, Multidisciplinary

Few-layer In4/3P2Se6 nanoflakes for high detectivity photodetectors

Hongxiao Zhao et al.

Summary: Metal phosphorus trichalcogenides (MPX3) are promising two-dimensional (2D) layered materials for future electronic and optoelectronic devices. Few-layer In4/3P2Se6 nanoflakes have been successfully exfoliated from high-quality single crystals, showing a weak van der Waals force between layers and a direct bandgap of 1.99 eV. In4/3P2Se6-based photodetectors demonstrate high performance in the visible light region, with high responsivity, external quantum efficiency, and fast response time, paving the way for future optoelectronic detection applications.

NANOSCALE (2021)

Article Chemistry, Multidisciplinary

2D Perovskite Sr2Nb3O10 for High-Performance UV Photodetectors

Siyuan Li et al.

ADVANCED MATERIALS (2020)

Article Engineering, Electrical & Electronic

High-Temperature Performance of a GaSe Nanosheet-Based Broadband Photodetector

Sahin Sorifi et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

Article Chemistry, Multidisciplinary

SbSI whisker/PbI2 flake mixed-dimensional van der Waals heterostructure for photodetection

Lin Sun et al.

CRYSTENGCOMM (2019)

Article Chemistry, Multidisciplinary

Tunneling Diode Based on WSe2/SnS2 Heterostructure Incorporating High Detectivity and Responsivity

Xing Zhou et al.

ADVANCED MATERIALS (2018)

Article Materials Science, Multidisciplinary

Charge Transfer Doping Modulated Raman Scattering and Enhanced Stability of Black Phosphorus Quantum Dots on a ZnO Nanorod

Liang Hu et al.

ADVANCED OPTICAL MATERIALS (2018)

Article Engineering, Electrical & Electronic

High-performance, multifunctional devices based on asymmetric van der Waals heterostructures

Ruiqing Cheng et al.

NATURE ELECTRONICS (2018)

Article Multidisciplinary Sciences

Black phosphorus ink formulation for inkjet printing of optoelectronics and photonics

Guohua Hu et al.

NATURE COMMUNICATIONS (2017)

Article Nanoscience & Nanotechnology

Self-Assembled Layer (SAL)-Based Doping on Black Phosphorus (BP) Transistor and Photodetector

Dong-Ho Kang et al.

ACS PHOTONICS (2017)

Article Chemistry, Multidisciplinary

Mixed-Dimensional 1D ZnO-2D WSe2 van der Waals Heterojunction Device for Photosensors

Young Tack Lee et al.

ADVANCED FUNCTIONAL MATERIALS (2017)

Article Nanoscience & Nanotechnology

High-Performance MoS2/CuO Nanosheet-on-One-Dimensional Heterojunction Photodetectors

Doo-Seung Um et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Chemistry, Multidisciplinary

Broadband Black-Phosphorus Photodetectors with High Responsivity

Mingqiang Huang et al.

ADVANCED MATERIALS (2016)

Article Chemistry, Multidisciplinary

Hybrid 2D-0D MoS2-PbS Quantum Dot Photodetectors

Dominik Kufer et al.

ADVANCED MATERIALS (2015)

Article Nanoscience & Nanotechnology

Ultrasensitive photodetectors based on monolayer MoS2

Oriol Lopez-Sanchez et al.

NATURE NANOTECHNOLOGY (2013)

Article Chemistry, Multidisciplinary

Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

PingAn Hu et al.

ACS NANO (2012)

Article Chemistry, Multidisciplinary

GaS and GaSe Ultrathin Layer Transistors

Dattatray J. Late et al.

ADVANCED MATERIALS (2012)

Article Nanoscience & Nanotechnology

Single-layer MoS2 transistors

B. Radisavljevic et al.

NATURE NANOTECHNOLOGY (2011)

Article Multidisciplinary Sciences

Electric field effect in atomically thin carbon films

KS Novoselov et al.

SCIENCE (2004)