Weak localization and antilocalization in twisted bilayer graphene

In this study, we investigate the weak localization (WL) and weak antilocalization (WAL) effects in twisted bilayer graphene positioned on a hexagonal boron nitride substrate. The bottom graphene layer aligns with the hexagonal boron nitride. The top layer of the system features a Dirac cone with a negligible gap, while the bottom layer possesses a relatively large band gap. With a low concentration of impurities, the quantum correction to conductivity stems from the quantum interference between two time-reversed impurity scattering trajectories. We discover that interlayer scattering significantly contributes to the conductivity correction when the Fermi surface areas of the two valleys at low energy are comparable. A double crossover from WL to WAL and back to WL occurs at a specific range of Fermi energy, which is particularly intriguing.

Automated summary

This study investigates the weak localization and weak antilocalization effects in twisted bilayer graphene on a hexagonal boron nitride substrate. The researchers discovered that interlayer scattering significantly contributes to the conductivity correction, and a double crossover from weak localization to weak antilocalization and back occurs at a specific range of Fermi energy.