☆ 4.5 Article

Half-metallic state of two-dimensional InO induced by a gate voltage

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2024)

Related references

Note: Only part of the references are listed.

Article Engineering, Electrical & Electronic

Scaled indium oxide transistors fabricated using atomic layer deposition

Mengwei Si et al.

Summary: Researchers have successfully fabricated high-performance indium oxide transistors with dimensions smaller than advanced silicon technologies using an industry-compatible atomic layer deposition process. This study is significant for improving integrated circuit performance and functionality.

NATURE ELECTRONICS (2022)

Add to Collection

Article Chemistry, Physical

Hole-doping induced ferromagnetism in 2D materials

Ruishen Meng et al.

Summary: Through high-throughput calculations and evolutionary search method, 122 2D materials with potential ferromagnetism upon hole doping are identified, with some materials predicted to have Curie temperatures above 300K. These findings are important for understanding the properties of doped 2D ferromagnetic materials and enriching the family of 2D magnetic materials.

NPJ COMPUTATIONAL MATERIALS (2022)

Add to Collection

Article Engineering, Electrical & Electronic

Doping-induced ferromagnetism in InSe and SnO monolayers

M. Houssa et al.

Summary: Hole-doping in GaX, InX, and SnO monolayers is predicted to induce stable ferromagnetic order due to their Mexican-hat valence band edge structure, leading to Stoner instability. Metal vacancies are found to produce shallow spin-polarized gap states near the valence band edge, resulting in p-type behavior. Among potential extrinsic defects, As substitution in SnO or Bi substitution in InSe seems to be good candidates for hole-doping these 2D materials.

JOURNAL OF COMPUTATIONAL ELECTRONICS (2021)

Add to Collection

Article Chemistry, Physical

Material proposal for 2D indium oxide

Anelia Kakanakova-Georgieva et al.

Summary: This study successfully demonstrated the formation of a novel 2D indium oxide, achieved through targeted intercalation and deposition of indium atoms at the graphene/SiC interface. A unique structural configuration with two sub-layers of indium atoms was observed, and bonding of oxygen atoms to indium atoms was confirmed. The 2D indium oxide exhibited a wide bandgap energy of 4.1 eV as estimated by conductive atomic force microscopy measurements.

APPLIED SURFACE SCIENCE (2021)

Add to Collection

Article Physics, Multidisciplinary

Spin-gapless semiconductors for future spintronics and electronics

Xiaotian Wang et al.

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS (2020)

Add to Collection

Article Computer Science, Interdisciplinary Applications

The PSEUDODOJO: Training and grading a 85 element optimized norm-conserving pseudopotential table

M. J. van Setten et al.

COMPUTER PHYSICS COMMUNICATIONS (2018)

Add to Collection

Article Nanoscience & Nanotechnology

Voltage Control of Magnetic Anisotropy through Ionic Gel Gating for Flexible Spintronics

Chenying Wang et al.

ACS APPLIED MATERIALS & INTERFACES (2018)

Add to Collection

Article Physics, Multidisciplinary

THz Emission Spectroscopy for THz Spintronics

Thomas Jarik Huisman et al.

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2017)

Add to Collection

Article Chemistry, Multidisciplinary

Large magneto-optical effects in hole-doped blue phosphorene and gray arsenene

Xiaodong Zhou et al.

NANOSCALE (2017)

Add to Collection

Article Nanoscience & Nanotechnology

Perspectives for spintronics in 2D materials

Wei Han

APL MATERIALS (2016)

Add to Collection

Article Nanoscience & Nanotechnology

Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters

Hao Luo et al.

ACS APPLIED MATERIALS & INTERFACES (2015)

Add to Collection

Article Physics, Applied

Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well

M. Ono et al.

APPLIED PHYSICS LETTERS (2010)

Add to Collection

Article Chemistry, Multidisciplinary

High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids

Hongtao Yuan et al.

ADVANCED FUNCTIONAL MATERIALS (2009)

Add to Collection

Article Physics, Multidisciplinary

Large Electric Field Effect in Electrolyte-Gated Manganites

Anoop Singh Dhoot et al.

PHYSICAL REVIEW LETTERS (2009)

Add to Collection

Review Chemistry, Physical

The emergence of spin electronics in data storage

Claude Chappert et al.

NATURE MATERIALS (2007)

Add to Collection

Article Physics, Applied

Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator:: The role of remote phonon scattering

MV Fischetti et al.

JOURNAL OF APPLIED PHYSICS (2001)

Add to Collection

© Peeref 2019-2024. All rights reserved.