Half-metallic state of two-dimensional InO induced by a gate voltage

Manipulating magnetism by electrical means is a very effective method to realize ultra-low power spintronic-integrated circuits. In this work, based on first-principles calculations, we demonstrate that the recently successfully fabricated two-dimensional semiconductor material, InO monolayer, can be tuned to the half-metallic state by applying a gate voltage to generate hole doping. Such a ferromagnetic state is independent of the partially occupied d-or f-orbital, it is associated with a narrow valence band. Our work provides theoretical guidance for the experimental adjustment of two-dimensional magnetic semiconductor, especially two-dimensional half-metallic material.

Automated summary

Manipulating magnetism by electrical means is an effective method for realizing ultra-low power spintronic-integrated circuits. In this study, it is demonstrated that the two-dimensional semiconductor material InO monolayer can be tuned to a half-metallic state by applying a gate voltage, providing theoretical guidance for adjusting two-dimensional magnetic semiconductors.