Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 6, Issue 2, Pages Q3052-Q3055Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0131702jss
Keywords
-
Funding
- Office of Naval Research (ONR) [N00014-15-1-2392]
- ONR
Ask authors/readers for more resources
The energy band alignment between atomic layer deposited (ALD) high-k dielectrics of ZrO2 and HfO2 with n-type beta-Ga2O3 was evaluated using x-Ray photoelectron spectroscopy. The valence band offset was found to be -0.3 +/- 0.04 eV and -0.5 +/- 0.04 eV for ZrO2 and HfO2, respectively, which produced type II, staggered gap alignments for both dielectrics with conduction band offsets greater than 1 eV. Capacitance-voltage measurements were conducted on metal-oxide-semiconductor (MOS) diodes and used to extract the dielectric constants (epsilon) of both oxides. ZrO(2)films had a nearly ideal e of 24.7 (epsilon similar to 25), while HfO2 exhibited a significantly lower epsilon of 14 (epsilon similar to 25-30). These results, combined with the small hysteresis (<= 0.09 eV) in the capacitance-voltage behavior for both films, is indicative of the high quality of these ALD oxides and their interface with the beta-Ga2O3 making them potential candidates as gate dielectrics in power devices based on this relatively new ultra-wide bandgap material. (C) 2016 The Electrochemical Society. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available