Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 5, Issue 12, Pages R203-R205Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0101612jss
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Funding
- Ministry of Science and Technology [MOST 104-2221-150-042, MOST 103-2221-E-150-034]
- National Science Council of Taiwan [NSC 102-2221-E-150-046, NSC 101-2221-E-150-043]
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In this study, indium doped ZnO (IZO) nanostructures were fabricated successfully on a glass substrate. It was found that the IZO nanostructures grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The composition of the doped zinc oxide (ZnO) nanostructures was confirmed by X-ray diffraction (XRD) and energy dispersive X-ray. The turn-on fields of ZnO and IZO nanostructures were 4.21 and 3.86 V/mu m, and field enhancement factors (beta) were 2695 and 5015, respectively. These results show that the field emission properties of the IZO nanostructures are better than those of ZnO nanostructures. (C) 2016 The Electrochemical Society. All rights reserved.
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