Journal
MATERIALS RESEARCH BULLETIN
Volume 169, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2023.112537
Keywords
Broadband NIR phosphors; SrGa2O4; Cr3+ emission; Crystal field; Photoluminescence
Categories
Ask authors/readers for more resources
We report the synthesis of novel Cr3+ activated SrGa2O4 phosphors with broadband near infrared (NIR) emission. The results indicate that broad NIR emission can be achieved by doping Cr3+ at multiple sites with weak crystal field splitting. This research is important for further tuning NIR emission.
Demand for novel near infrared (NIR) emitting phosphors due to their potential applications in various fields led to exploring different systems for broadband NIR emission. Here, we report synthesis of novel Cr3+ activated SrGa2O4 via solid state reactions which depicted NIR in the range of 670-1100 nm with FWHM similar to 170 nm. The maximum NIR intensity was obtained for 5 % doping having less number of vacancy clusters. The broadband NIR emission is due to doping of Cr3+ at multiple sites in SrGa2O4, namely, two different Sr octahedra and Ga tetrahedral sites with weak crystal field splitting. The results indicate that Cr(3+)doping in simple hosts with multiple doping sites with weak crystal field splitting could be used to get broad NIR emission in Cr3+ doped samples. This work would help in further tuning the NIR emission with careful choice of hosts with varying doping sites and offering different crystal field strengths.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available