Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 43, Issue 16, Pages 7455-7462Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2023.07.024
Keywords
Antiferroelectric thin film; Phase transition; Strain; Photoluminescence; Flexibility
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In this study, flexible Er-doped Pb0.98La0.02Zr0.95-Ti0.05O3 (PLZT) antiferroelectric thin films were prepared using the sol-gel method, and a giant and reversible photoluminescence intensity modulation was achieved during the bending process. The relationship among curvature-dependent strains, crystal structure, and photoluminescence modulation was discussed through density functional theory calculations and Raman spectra measurements.
Tunable photoluminescence (PL) has wide applications in optical waveguides and communication. Since the PL intensity is strongly dependent on the crystal field symmetry, curvature-dependent strain-induced PL modulation is expected in flexible antiferroelectric (AFE) thin film materials. Here, flexible Er-doped Pb0.98La0.02Zr0.95-Ti0.05O3 (PLZT) AFE thin films were prepared via the sol-gel method. A giant and reversible PL intensity modulation (482%) was achieved during the bending process. Based on density functional theory (DFT) calculations and Raman spectra measurements, the relationship amongst the curvature-dependent strains, crystal structure, and PL modulation was discussed. The induced strain leads to lattice distortion and even a phase transition, both of which contribute to the reduction in crystal symmetry and thus significantly enhance the PL intensity.
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