4.6 Article

Reference Temperature Sensor for TMOS-Based Thermal Detectors

Journal

IEEE ACCESS
Volume 11, Issue -, Pages 96594-96602

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2023.3312620

Keywords

Sensor; temperature; TMOS; thermal detector; interface circuit; resolution; inaccuracy; temperature-to-digital converter; switched capacitor; sigma delta; ADC

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This paper introduces a temperature sensor system that provides the reference temperature for TMOS-based thermal detectors, enabling contactless absolute temperature measurements. The system uses a few pixels of the TMOS detector as the sensing element to detect the local TMOS temperature, while the readout circuit is integrated on a separate chip. The readout circuit features a two-phase time-domain architecture, which provides biasing to the sensing element by switching between two different bias current values. The temperature reading is converted to the digital domain using a switched-capacitor 1-bit second-order sigma-delta analog to-digital converter. The proposed system was fabricated and tested using a 130-nm CMOS process, demonstrating its suitability for contactless human body temperature measurements with high resolution and accuracy.
This paper presents a temperature sensor system providing the reference temperature of TMOSbased thermal detectors, in order to enable contactless absolute temperature measurements. The proposed system directly employs a few pixels of the TMOS detector as sensing element, thus detecting the local TMOS temperature, while the readout circuit is integrated on a separate chip. The readout circuit features a two-phase time-domain architecture, which provides biasing to the sensing element by alternatively switching between two different bias current values in subsequent phases. The temperature reading is converted to the digital domain thanks to a switched-capacitor 1-bit second-order sigma-delta (E A) analog to-digital converter (ADC). The proposed readout system was fabricated in a 130-nm CMOS process and extensively characterized through measurements, together with the TMOS detector, realized in a 130-nm CMOS SOI technology and bonded on the same package. The proposed reference temperature sensor system, burning 10.8-mu W power, features 97-mK resolution when considering a 4096-ms conversion time and 0.13 degrees C peak-to-peak inaccuracy after three point calibration in the 15-40 degrees C range, thus satisfying the characteristics for contactless human body temperature measurements.

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