4.7 Article

Optical, structural and dielectric properties of solvothermally grown molybdenum sulfide nanosheets

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 969, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2023.172356

Keywords

Molybdenum sulfide; Dielectric constant; AC conductivity; Nyquist plot; Activation energy; Optical properties

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MoS2 nanosheets with a hexagonal crystal structure were synthesized using solvothermal methods. The optical properties of the nanosheets were investigated, including absorbance, photoluminescence, refractive index, dielectric constant, and optical conductivity. Temperature-dependent indirect bandgap and carrier lifetime were simulated and analyzed. The MoS2 exhibited a large dielectric constant and low tangent loss, showing semiconductor-like behavior.
MoS2 nanosheets have been synthesized by simple and conventional solvothermal methods. FEG-TEM images reveal that the produced MoS2 sample has a hexagonal crystal structure with large (2 mu m) nanosheets. The XRD and Raman spectra of the samples also confirm the hexagonal crystal phase. The schematic refined unit cell with electron density mapping is visualized after Rietveld refinement. The optical properties such as absorbance, PL, refractive index, extinction coefficient, dielectric constant, optical conductivity, etc. have been investigated in the wavelength range of 330 nm to 1000 nm. The normal dispersion (ND) and the anomalous dispersion (AD) regions have been observed in the refractive index spectrum. The estimated carrier concentration has been found to be 5 x 104 cm 3. The temperature-dependent indirect bandgap of MoS2 has been simulated using a semiempirical formula based on electron-phonon coupling and it decreases with increasing temperature. The calculated average lifetime of carriers is 1.17 ns. The grown MoS2 shows large dielectric constant and low tangent loss in the frequency range of 5-500 kHz. The Nyquist plot of the sample gives the NTCR (negative temperature coefficient of resistance) behaviour like a semiconductor. The activation energy (EA) has been estimated from temperature dependence AC conductivity.

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