Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator

Catalyst-free, selective nano-epitaxy of III-V nanowires provides an excellent mate-rials platform for designing and fabricating ultra-compact, bottom-up photonic crystal lasers. In this work, we propose a new type of photonic crystal laser with a curved cavity formed by InGaAs nanowires grown directly on silicon-on-insulator. This paper investigates the effect of the radius of the curved cavity on the emission wavelength, quality factor as well as laser beam emission angle. We find that the introduction of curvature does not degrade the quality factor of the cavity, thereby offering another degree of freedom when designing low-footprint multiwavelength photonic crystal nanowire lasers. The experimentally demonstrated device shows a lasing threshold of 157 mu J/cm2 at room temperature at telecom O-band wavelengths.Published by Optica Publishing Group under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Automated summary

This study proposes a photonic crystal laser with a curved cavity formed by InGaAs nanowires grown directly on silicon-on-insulator, using catalyst-free, selective nano-epitaxy. The introduction of curvature does not degrade the quality factor of the cavity, providing another degree of freedom for designing low-footprint multiwavelength photonic crystal nanowire lasers.