Nonvolatile and volatile resistive switching characteristics in MoS2 thin film for RRAM application

Resistive random access memory (RRAM) is one of strong candidates for future memory technology. The volatile and nonvolatile properties of devices are important foundations for the construction of neuromorphic hardware systems, which still represents a challenge. In this study, we fabricated the Cu/MoS2/ITO RRAM by RF magnetic sputtering with different thicknesses of MoS2 thin films, and explored the possibility of obtaining the nonvolatile and volatile memristive effects of RRAM devices through different operating voltages. By systematically inves-tigating the resistive switching (RS) characteristics, we proposed and discussed the nonvolatile and volatile conceptual models to elaborate on the RS mechanism of the fabricated devices. The nonvolatile and volatile behaviors were explained respectively by the forming and breaking of Cu conductive filaments between Cu and ITO, and the trapping and de-trapping of electrons leading to the change of the Schottky barrier at the ITO/MoS2 interface.

Automated summary

This study investigates the resistive switching characteristics of Cu/MoS2/ITO RRAM and proposes conceptual models to explain the nonvolatile and volatile behaviors observed. The results suggest that the resistive switching is influenced by the formation and breaking of Cu conductive filaments and the trapping and de-trapping of electrons at the ITO/MoS2 interface.