Demonstration of the normally off β-Ga2O3 MOSFET with high threshold voltage and high current density

In this work, we demonstrated the enhancement mode (E-mode) beta-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure. This E-mode Ga2O3 MOSFET featured the highest V-TH of 9.03 V and the highest maximum current I-D of 70.0 mA/mm among the reported lateral normally off beta-Ga2O3 MOSFETs. Meanwhile, a breakdown voltage of 834 V, a specific on-resistance R-ON,R-sp of 19.3 m Omegacm(2), and a sub-threshold swing SS of 87 mV/dec were achieved simultaneously. In addition, V-TH shifted by only 9.9% after applying a gate stress of 25 V for 10(5) s. These findings provide a promising path for the development of enhancement-mode Ga2O3 power devices by incorporating a charge-storage structure.

Automated summary

By introducing a hybrid floating gate structure, we demonstrated the enhancement of E-mode Ga2O3 MOSFET in multiple performance metrics, providing a promising path for the development of enhancement-mode Ga2O3 power devices.