Electric Field Control of Magnetization Reversal and Multiple Magnetic States in a Doubly Exchange-Biased Co/IrMn Bilayer

Electric field (E-field) control of magnetism, especially for magnetization reversal, is essential for the design of energy-efficient spintronic devices. Here, a simple way of E-field control of magnetization reversal is proposed and accomplished on a doubly exchange-biased Co/IrMn bilayer with two collinear but opposite pinning directions. The sample was grown on a ferroelectric (FE) single crystalline (011)-oriented [Pb(Mg1/3Nb2/3)O-3](0.68)-[PbTiO3](0.32) (PMN-PT) substrate, which has anisotropic and significant remanent strain. During film deposition, a specially designed magnetic field is produced by two identical North poles facing each other along the [01-1] axis, on which the PMN-PT demonstrates tensile strain. Moreover, E-field control of multiple magnetic states could also be realized in this unique doubly exchange-biased system. This work will provide a valuable reference for manufacturing low-energy magnetic storage memory devices

Automated summary

This paper proposes a simple method of electric field control of magnetization reversal and successfully implements it on a Co/IrMn bilayer with doubly exchange bias. The method involves generating tensile strain on a ferroelectric substrate using a specially designed magnetic field. Multiple magnetic states can be controlled by the electric field in this unique system. This work is of great significance for the manufacturing of low-energy magnetic storage memory devices.